Detailed Product Description
The specifications of the PN:JL-LL301nm 1.25G/2.5Gbps FP Laser diode for Optical communication with Transistor Out-line can package products. Such as EPON, GPON fiber communication links, Data center etc. With RoHS and Halogen Free compliance.
Structure: InGaAs/InP, backside cathode and topside anode configuration.
Feature: Low Threshold and operation current/high reliability/low electrical parasitic/
Data rates from DC to 2.5Gbps/Excellent slope efficiency and spectral width
Keywords: Laser Diode Laser Diode Chip